Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part NumberAP4506GEM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4506GEM-HF datasheet
 


Specifications of AP4506GEM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.3Qgs (nc)1.5
Qgd (nc)4Id(a)6.4
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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AP4506GEM-HF
P-Channel
30
o
T
= 25
C
A
20
10
0
0
1
2
-V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
44
I
D
T
= 25
A
40
36
32
28
24
2
4
6
-V
,Gate-to-Source Voltage (V)
GS
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
o
T
=150
C
j
4
2
0
0
0.2
0.4
0.6
-V
, Source-to-Drain Voltage (V)
SD
Fig 5. Forward Characteristic of
Reverse Diode
30
-10V
-7.0V
-5.0V
-4.5V
20
V
= - 3.0V
G
10
0
0
3
4
5
1.6
= -3 A
o
C
1.4
1.2
1.0
0.8
0.6
-50
8
10
1.6
1.2
o
T
=25
C
j
0.8
0.4
0.8
1
1.2
-50
o
T
= 150
C
A
V
1
2
3
4
-V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
I
= -5A
D
V
= -10V
G
0
50
100
o
T
, Junction Temperature (
C)
j
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
50
100
o
T
, Junction Temperature (
C)
j
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
-10V
-7.0V
-5.0V
-4.5V
= - 3.0V
G
5
6
150
150
6