AP4506GEM-HF Advanced Power Electronics Corp., AP4506GEM-HF Datasheet - Page 6

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part Number
AP4506GEM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4506GEM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
30
Rds(on) / Max(m?) Vgs@4.5v
36
Qg (nc)
8.3
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
6.4
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
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P-Channel
AP4506GEM-HF
30
20
10
10
44
40
36
32
28
24
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
1
-V
DS
SD
4
GS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
,Gate-to-Source Voltage (V)
T
j
=150
2
T
A
= 25
0.6
o
6
C
T
I
A
o
D
= 25
C
3
= -3 A
0.8
o
C
T
8
V
j
=25
G
4
= - 3.0V
1
-7.0V
-5.0V
-4.5V
o
-10V
C
10
1.2
5
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
= -10V
= -5A
1
v.s. Junction Temperature
Junction Temperature
-V
T
T
DS
0
0
j
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
T
A
= 150
3
50
50
o
C
4
100
100
o
o
V
C)
C)
G
5
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
6
150
150
6

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