Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4511GH

Manufacturer Part NumberAP4511GH
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4511GH datasheet
 


Specifications of AP4511GH

Vds35VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v40
Qg (nc)11Qgs (nc)3
Qgd (nc)6Id(a)15
Pd(w)10.4ConfigurationComplementary N-P
PackageTO-252-4L  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
C
I
@T
=100℃
Continuous Drain Current
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1/D2
S1
G1
S2
G2
TO-252-4L
N-channel
3
3
1
Parameter
3
3
AP4511GH
RoHS-compliant Product
N-CH BV
35V
DSS
R
30mΩ
DS(ON)
I
15A
D
P-CH BV
-35V
DSS
R
48mΩ
DS(ON)
I
-12A
D
D1
G2
G1
S1
Rating
Units
P-channel
35
-35
+20
+20
15
-12
9
-7
50
-50
10.4
0.083
W/℃
-55 to 150
-55 to 150
Value
Units
12
℃/W
110
℃/W
200809174
D2
S2
V
V
A
A
A
W
1

AP4511GH Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 3 AP4511GH RoHS-compliant Product N-CH BV 35V DSS R 30mΩ DS(ON) I 15A D P-CH BV -35V DSS R 48mΩ DS(ON) I -12A ...

  • Page 2

    ... AP4511GH N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... D V =-28V DS V =-4. =-18V =3.3Ω, =18Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-6A =-6A dI/dt=-100A/µs AP4511GH Min. Typ. -35 - =-1mA - -0. =-10V ...

  • Page 4

    ... AP4511GH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance V o =150 Fig 12. Gate Charge Waveform AP4511GH f=1.0MHz C iss C oss C rss Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0 ...

  • Page 6

    ... AP4511GH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.1 1ms 10ms 100ms DC 0.01 10 100 0.00001 Fig 10. Effective Transient Thermal Impedance o T =150 AP4511GH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 t 0.01 Duty factor = t/T Single Pulse Peak ...

  • Page 8

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) 4511GH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM A 6.40 6.6 B 5.2 5.35 C 9.40 9.80 D 2.40 2.70 1.27 REF 0.50 0.65 E3 3.50 4.00 R 0.80 1.00 G 0.40 0.50 H 2.20 2.30 J 0.45 0.50 K 0.00 0.075 L 0.90 1.20 M 5.40 5.60 1.All Dimensions Are in Millimeters. ...