IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet
IXGH50N60C4D1
Specifications of IXGH50N60C4D1
Related parts for IXGH50N60C4D1
IXGH50N60C4D1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGQ50N60C4D1 IXGH50N60C4D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 220 = 10Ω ≤ CES 300 -55 ... +150 150 -55 ...
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... 100° 100°C 100 30V R (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGQ50N60C4D1 IXGH50N60C4D1 TO-3P Outline Max Gate 3 = Emitter 1. 0.42 °C/W °C/W ...
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... T = 25ºC J 140 120 100 IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V 12V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 15V ...
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... C ies oes res 10 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω ...
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... IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º Amperes C Fig ...
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... Ω 15V 400V 72A 36A 105 115 125 IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 125º ...
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... F 120 110 100 I 90 15A 80 7. 200 400 600 160 -di /dt - A/µs F 0.001 0.01 0.1 Pulse Width - Second IXGQ50N60C4D1 IXGH50N60C4D1 Fig. 23. Peak Reverse Current vs 100º 300V 200 400 1000 -di Fig. 26. Peak Forward Voltage & Forward Recovery Time vs ...