IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH50N60C4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGH50N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 90
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 46
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 63
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

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100
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
6
0
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
18A
8
36A
Gate-to-Emitter Voltage
I
1
1
9
C
= 72A
V
CE
V
10
V
CE
- Volts
GE
- Volts
1.5
1.5
- Volts
11
V
V
GE
GE
= 15V
= 15V
13V
11V
10V
13V
12V
11V
10V
12
2
2
J
J
= 125ºC
= 25ºC
13
2.5
2.5
T
J
= 25ºC
14
9V
8V
7V
6V
9V
8V
7V
6V
15
3
3
160
140
120
100
300
250
200
150
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
50
0
0
-25
4.5
0
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
5
= 15V
0
5.5
5
14V
Fig. 4. Dependence of V
6
25
Fig. 6. Input Admittance
Junction Temperature
10
T
6.5
J
13V
- Degrees Centigrade
V
50
CE
V
7
GE
- Volts
15
12V
- Volts
7.5
IXGQ50N60C4D1
IXGH50N60C4D1
75
T
J
I
I
I
11V
C
C
C
= - 40ºC
= 72A
= 36A
= 18A
8
CE(sat)
25ºC
20
100
10V
8.5
on
125ºC
9V
9
J
25
125
= 25ºC
8V
9.5
7V
6V
150
30
10