IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 2

• Manufacturer Part Number: IXGH50N60C4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGH50N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 90
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 46
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 63
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g
ge
gc
J
J
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
F
F
I
F
R
= 15A, V
= 15A, V
= 100V
= 1A, V
V
I
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
=
= 36A, V
= 36A, V
= 36A, V
= 25V, V
= 400V, R
= 400V, R
I
C110
GE
GE
GE
, V
= 0V, -di
= 0V, Note 1
= 0V, -di
GE
GE
GE
CE
GE
= 15V
= 15V
= 10V, Note 1
= 15V, V
G
G
= 0V, f = 1MHz
= 10
= 10
4,835,592
4,881,106
F
F
/dt = 100A/μs, V
J
J
/dt = 100A/μs
= 25°C
= 125°C
Ω
Ω
CE
= 0.5
4,931,844
5,017,508
5,034,796
•
V
,
CES
R
5,049,961
5,063,307
5,187,117
= 30V
T
T
T
J
J
J
20
= 150°C
= 100°C
= 100°C
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1900
0.95
0.84
1.10
0.90
0.25
Typ.
100
113
270
210
30
60
13
44
40
66
63
30
45
96
CE
Typ.
1.6
100
(clamp), T
25
Max.
1.55
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
1.6 °C/W
Max.
2.7
2.6
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
1 = Gate
3 = Emitter
TO-3P Outline
TO-247 Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXGQ50N60C4D1
IXGH50N60C4D1
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
3 - Emitter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2,4
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
= Collector
2 - Collector
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216