IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH50N60C4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGH50N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 90
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 46
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 63
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
0.1
45
40
35
30
25
20
15
10
10
0.00001
5
0
1
0
0
f
= 1 MHz
5
20
10
40
Fig. 7. Transconductance
Fig. 9. Capacitance
15
0.0001
60
I
V
C
CE
- Amperes
- Volts
20
80
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
100
T
J
= - 40ºC
30
125ºC
25ºC
120
0.001
35
Pulse Width - Second
140
40
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
150
V
I
I
J
G
C
G
CE
= 125ºC
= 10
0.01
= 36A
= 10mA
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
20
200
250
40
300
Fig. 8. Gate Charge
Q
G
- NanoCoulombs
V
350
CE
60
- Volts
400
0.1
IXGQ50N60C4D1
IXGH50N60C4D1
450
80
500
550
100
600
120
650
1