IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 5

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IXGH50N60C4D1

Manufacturer Part Number
IXGH50N60C4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet

Specifications of IXGH50N60C4D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
90
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
46
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
18
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-247
© 2011 IXYS CORPORATION, All Rights Reserved
4.5
3.5
2.5
1.5
0.5
150
130
110
3.5
2.5
1.5
0.5
90
70
50
30
4
3
2
1
0
3
2
1
0
10
25
15
Fig. 16. Inductive Turn-off Switching Times vs.
E
R
V
E
T
V
t
R
V
Fig. 12. Inductive Switching Energy Loss vs.
Fig. 14. Inductive Switching Energy Loss vs.
35
J
off
G
CE
off
CE
f i
CE
G
= 125ºC , V
= 10
= 10
= 400V
= 400V
= 400V
25
Ω ,
15
45
, V
V
GE
GE
GE
E
E
= 15V
55
T
t
on
Junction Temperature
= 15V
d(off)
on
= 15V
J
35
- - - -
T
- Degrees Centigrade
- - - -
Collector Current
J
Gate Resistance
= 25ºC, 125ºC
- - - -
R
20
65
I
G
C
- Ohms
- Amperes
45
75
25
85
I
55
I
C
I
I
C
C
C
= 72A
95
= 36A
= 72A
= 36A
30
105
65
115
75
35
125
360
320
280
240
200
160
120
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
3.5
3
2.5
2
1.5
1
0.5
0
3.5
2.5
1.5
0.5
130
120
110
100
135
130
125
120
115
110
105
100
90
80
70
60
50
3
2
1
0
95
90
15
25
10
Fig. 15. Inductive Turn-off Switching Times vs.
Fig. 17. Inductive Turn-off Switching Times vs.
E
R
V
off
G
CE
T
V
35
Fig. 13. Inductive Switching Energy Loss vs.
t
t
R
V
I
= 10
f i
J
CE
f i
G
CE
C
= 400V
= 125ºC, V
= 10
= 72A
25
= 400V
= 400V
Ω ,
I
45
15
C
= 72A
, V
V
GE
GE
GE
E
55
= 15V
Junction Temperature
t
on
t
d(on)
= 15V
d(off)
= 15V
35
T
J
- - - -
Collector Current
Gate Resistance
- Degrees Centigrade
I
- - - -
C
- - - -
65
I
20
- Amperes
C
T
R
= 36A
J
G
= 125ºC, 25ºC
- Ohms
75
45
85
IXGQ50N60C4D1
IXGH50N60C4D1
25
55
95
105
30
65
I
C
115
= 36A
125
35
75
320
300
280
260
240
220
200
180
160
550
500
450
400
350
300
250
200
150
100
3.5
3
2.5
2
1.5
1
0.5
0

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