CM1500HC-66R Powerex Inc, CM1500HC-66R Datasheet - Page 6

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CM1500HC-66R

Manufacturer Part Number
CM1500HC-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1500HC-66R

Voltage
3300V
Current
1500A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1000
8
7
6
5
4
3
2
1
0
HALF-BRIDGE SWITCHING ENERGY
100
CAPACITANCE CHARACTERISTICS
0
10
1
CHARACTERISTICS (TYPICAL)
V
R
L
Inductive load
0.1
S
CC
G(on)
= 100nH, Tj = 125°C
= 1800V, V
500
= 1.6Ω, R
V
f = 100kHz
GE
Collector-Emitter Voltage [V]
= 0V, Tj = 25°C
Collector Current [A]
GE
1000
G(off)
= ±15V
(TYPICAL)
= 5.6Ω
1
1500
2000
10
2500
Coes
Cies
Cres
Erec
3000
Eoff
Eon
100
-10
-15
8
7
6
5
4
3
2
1
0
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
R
L
Inductive load
S
CC
G(on)
= 100nH, Tj = 150°C
V
Tj = 25°C
= 1800V, V
500
CE
= 1.6Ω, R
= 1800V, I
Collector Current [A]
GE
1000
CM1500HC-66R
5
G(off)
= ±15V
(TYPICAL)
C
Gate Charge [µC]
= 1500A
= 5.6Ω
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
1500
10
2000
HVM-1054-C
INSULATED TYPE
15
2500
Erec
3000
Eon
Eoff
6 of 9
20

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