CM1500HC-66R Powerex Inc, CM1500HC-66R Datasheet - Page 7

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CM1500HC-66R

Manufacturer Part Number
CM1500HC-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1500HC-66R

Voltage
3300V
Current
1500A
Circuit Configuration
Single
Rohs Compliant
No
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
8
7
6
5
4
3
2
1
0
0.01
100
HALF-BRIDGE SWITCHING ENERGY
0.1
10
0
1
HALF-BRIDGE SWITCHING TIME
100
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CHARACTERISTICS (TYPICAL)
CC
GE
= ±15V, L
= 1800V, I
V
R
L
Inductive load
S
CC
G(on)
2
tr
= 100nH, Tj = 125°C
tf
= 1800V, V
= 1.6Ω, R
S
C
= 100nH
= 1500A
Gate resistor [Ohm]
Collector Current [A]
4
GE
G(off)
= ±15V
= 5.6Ω
1000
6
Erec
Eon
8
td(off)
td(on)
10
10000
Eoff
12
8
7
6
5
4
3
2
1
0
0.01
100
HALF-BRIDGE SWITCHING ENERGY
0.1
10
0
1
HALF-BRIDGE SWITCHING TIME
100
CHARACTERISTICS (TYPICAL)
V
V
Tj = 150°C, Inductive load
CHARACTERISTICS (TYPICAL)
CC
GE
= ±15V, L
= 1800V, I
V
R
L
Inductive load
S
CC
G(on)
2
tr
= 100nH, Tj = 150°C
tf
= 1800V, V
= 1.6Ω, R
S
C
= 100nH
CM1500HC-66R
= 1500A
Gate resistor [Ohm]
Collector Current [A]
4
GE
G(off)
= ±15V
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
= 5.6Ω
1000
6
Erec
Eon
HVM-1054-C
8
INSULATED TYPE
td(off)
td(on)
10
10000
Eoff
7 of 9
1
2

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