BLF6G10-135RN NXP Semiconductors, BLF6G10-135RN Datasheet
BLF6G10-135RN
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BLF6G10-135RN Summary of contents
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... BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... NXP Semiconductors 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G10-135RN (SOT502A BLF6G10LS-135RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3 ...
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... Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G10-135RN and BLF6G10LS-135RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G10-135RN_10LS-135RN_1 Product data sheet Thermal characteristics Conditions thermal resistance from case ...
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... 950 mA Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values BLF6G10-135RN_10LS-135RN_1 Product data sheet (dB 950 mA 881 MHz. ...
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... Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input 50 C1 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10-135RN_10LS-135RN_1 Product data sheet 001aah867 50 D (%) ACPR (dBc ...
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... C16 multilayer ceramic chip capacitor C18, C19, C20 electrolytic capacitor L1 ferrite SMD bead Q1 BLF6G10LS-135RN R1, R2, R3 SMD resistor [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-135RN_10LS-135RN_1 Product data sheet 800 -1000 MHz V1.0 Value 68 pF 8.2 pF ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A BLF6G10-135RN_10LS-135RN_1 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5.33 19 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B BLF6G10-135RN_10LS-135RN_1 Product data sheet scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... PDPCH RF SMD VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G10-135RN_10LS-135RN_1 BLF6G10-135RN_10LS-135RN_1 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications ...
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... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF6G10-135RN_10LS-135RN_1 Product data sheet [3] Definition This document contains data from the objective specification for product development. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10-135RN_10LS-135RN_1 All rights reserved. Date of release: 10 February 2009 ...