BUP309 Infineon Technologies AG, BUP309 Datasheet

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IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Type ...

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Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, ...

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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 1200 Gon Rise time V = 1200 ...

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Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...

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Package Outlines Dimensions in mm Weight Semiconductor Group 5 BUP 309 Jul-30-1996 ...