BUP309 Infineon Technologies AG, BUP309 Datasheet
Home In Stock Infineon Technologies AG BUP309
Manufacturer Part Number
BUP309
Manufacturer
Infineon Technologies AG
Available stocks
IGBT
Semiconductor Group
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Type
BUP 309
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Avalanche energy, single pulse
I
L = 200 µH, T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
GE
= 15 A, V
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 25 °C
= 20 k
Preliminary data
CC
j
= 25 °C
= 50 V, R
GE
p
= 1 ms
= 25
V
1700V 25A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
E
P
T
T
C
Cpuls
j
stg
CE
CGR
GE
AS
tot
Pin 1
G
Ordering Code
Q67078-A4204-A2
-55 ... + 150
-55 ... + 150
Values
± 20
1700
1700
310
25
16
50
32
23
Pin 2
C
Jul-30-1996
BUP 309
Unit
V
A
mJ
W
°C
Pin 3
E
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BUP309 Summary of contents
IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Type ...
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, ...
Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 1200 Gon Rise time V = 1200 ...
Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...
Package Outlines Dimensions in mm Weight Semiconductor Group 5 BUP 309 Jul-30-1996 ...
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