BUZ71FI STMicroelectronics, BUZ71FI Datasheet

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BUZ71FI

Manufacturer Part Number
BUZ71FI
Description
Manufacturer
STMicroelectronics
Datasheet

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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
July 1999
BUZ71
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
V
V
P
T
I
DGR
I
DM
T
stg
DS
GS
D
tot
j
TYPE
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CATEGORY (DIN 40040)
IEC CLIMATIC CATEGORY (DIN IEC 68-1)
®
DS(on)
= 0.085
V
50 V
DSS
N - CHANNEL 50V - 0.085 - 17A TO-220
< 0.1
R
c
Parameter
DS(on)
GS
= 25
GS
= 20 k )
= 0)
o
C
c
17 A
= 25
I
D
o
C
STripFET
INTERNAL SCHEMATIC DIAGRAM
POWER MOSFET
-65 to 175
55/150/56
TO-220
Value
175
50
50
17
68
60
E
20
1
2
3
BUZ71
Unit
o
o
W
V
V
V
A
A
C
C
1/8

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BUZ71FI Summary of contents

Page 1

N - CHANNEL 50V - 0.085 - 17A TO-220 TYPE V DSS BUZ71 50 V TYPICAL R = 0.085 DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE APPLICATIONS HIGH CURRENT, HIGH SPEED ...

Page 2

BUZ71 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter I Source-drain Current SD I Source-drain Current SDM (pulsed Forward On Voltage SD t Reverse Recovery rr Time Q Reverse Recovery rr Charge ( ) Pulsed: Pulse duration = ...

Page 4

BUZ71 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature BUZ71 5/8 ...

Page 6

BUZ71 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-220 MECHANICAL DATA DIM. MIN. TYP. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 ...

Page 8

... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U ...

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