HCF4093BM1 STMicroelectronics, HCF4093BM1 Datasheet
HCF4093BM1
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HCF4093BM1 Summary of contents
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... NAND gate with schmitt trigger action on both inputs. The gate switches at different points for positive and negative going signals. The difference between the positive voltage (V the negative voltage (V Semiconductor voltage (V HCF4093B DIP SOP TUBE T & R HCF4093BEY HCF4093BM1 HCF4093M013TR four schmitt ) is defined as hysteresis and P 1/7 ...
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HCF4093B INPUT EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Symbol V Supply Voltage Input Voltage Input Current I P Power Dissipation per Package D Power Dissipation per Output Transistor T Operating Temperature op T Storage Temperature ...
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DC SPECIFICATIONS Symbol Parameter V (V) I Quiescent Current 0/5 L 0/10 0/15 0/20 V High Level Output 0/5 OH Voltage 0/10 0/15 V Low Level Output 5/0 OL Voltage 10/0 15/0 V Positive Trigger a P Threshold Voltage a ...
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HCF4093B DYNAMIC ELECTRICAL CHARACTERISTICS (T Symbol Parameter t t Propagation Delay Time PLH PHL t t Output Transition Time TLH THL (*) Typical temperature coefficient for all V TEST CIRCUIT C = 50pF or equivalent (includes jig and probe capacitance) ...
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Plastic DIP-14 MECHANICAL DATA mm. DIM. MIN. a1 0. 15. 1.27 TYP MAX. MIN. 0.020 1.65 0.055 0.5 0.25 20 8.5 2.54 7.1 5.1 3.3 2.54 0.050 HCF4093B ...
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HCF4093B DIM. MIN 0 0. 8. 3.8 G 4 6/7 SO-14 MECHANICAL DATA mm. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.5 ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...