STN1NB80 STMicroelectronics, STN1NB80 Datasheet
STN1NB80
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STN1NB80 Summary of contents
Page 1
... Max. Operating Junction Temperature Pulse width limited by safe operating area November 1999 - 0.2A - SOT-223 PowerMESH SOT-223 INTERNAL SCHEMATIC DIAGRAM Value 100 -65 to 150 ( ) I 0.2 A, di/dt 200 STN1NB80 MOSFET 800 V 800 0.2 A 0.12 A 0 ...
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... STN1NB80 THERMAL DATA R Thermal Resistance Junction-case thj -case Thermal Resistance Junction-ambient Rthj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy ...
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... GS Test Con ditions Min. = 640 1 4 Test Con ditions Min. =0 1.1 A di/dt = 100 100 150 C j Thermal Impedance STN1NB80 T yp. Max. Unit 3 yp. Max. Unit yp. Max. Unit ...
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... STN1NB80 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STN1NB80 Normalized On Resistance vs Temperature 5/8 ...
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... STN1NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. MAX. a 2.27 2.3 b 4.57 4.6 c 0.2 0.4 d 0.63 0.65 e1 1 0.67 0 3.5 3.5 L 6.3 6 mils MIN. TYP. MAX. 2.33 89.4 90.6 4.63 179.9 181.1 182.3 0.6 7.9 15.7 0.67 24.8 25.6 1.7 59.1 63 0.32 3.1 114.2 118.1 122.1 0.73 26.4 27.6 7.3 263.8 275.6 287.4 3.7 137.8 137.8 145.7 6.7 248 255.9 263 P008B STN1NB80 91.7 23.6 26.4 66.9 12.6 28.7 7/8 ...
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... STN1NB80 Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...