STP3NB80 STMicroelectronics, STP3NB80 Datasheet

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STP3NB80

Manufacturer Part Number
STP3NB80
Description
Manufacturer
STMicroelectronics
Datasheet

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STP3NB80FP
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DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(
January 1999
ST P3NB80
ST P3NB80FP
Symbol
dv/dt(
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
I
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY(UPS)
DC-DC & DC-AC CONVERTERS FOR
V
Limited only by maximum temperature allowed
DM
V
V
V
T
P
DGR
I
I
T
ISO
GS
s tg
DS
D
D
tot
TYPE
( )
j
1
)
N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FP
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
T otal Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
800 V
800 V
V
= 4.6
DSS
< 6.5
< 6.5
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
2.6 A
2.6 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
2.6 A di/dt 200 A/ s, V
TO-220
STP3NB80
10.4
0.72
2.6
1.6
90
1
2
-65 to 150
STP3NB80FP
3
Value
800
800
150
DD
30
STP3NB80
STP3NB80F P
V
(BR)DSS
2.6 ( )
1.6 (
TO-220FP
2000
10.4
0.28
4.5
35
MOSFET
, Tj
T
JMA
1
W /
Un it
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP3NB80 Summary of contents

Page 1

... D 2 TO-220 INTERNAL SCHEMATIC DIAGRAM Value STP3NB80 2 100 C 1 0.72 -65 to 150 ( ) I 2.6 A di/dt 200 STP3NB80 MOSFET TO-220FP Un it STP3NB80F P 800 V 800 4.5 V/ns 2000 150 (BR)DSS JMA 1/9 ...

Page 2

... STP3NB80/FP THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy ...

Page 3

... Test Con ditions Min. = 640 4 Test Con ditions Min 2.6 A di/dt = 100 100 150 C j Safe Operating Area for TO-220FP STP3NB80/FP T yp. Max. Unit 6 yp. Max. Unit ...

Page 4

... STP3NB80/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP3NB80/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP3NB80/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MAX. MIN. TYP. 4.60 0.173 1.32 0.048 2.72 0.094 0.050 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 0.645 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 STP3NB80/FP MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/9 ...

Page 8

... STP3NB80/FP TO-220FP MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ¯ 8/9 inch MAX. MIN. TYP. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 0.630 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 ...

Page 9

... The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . STP3NB80/FP 9/9 ...

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