STP40NE03L-20 STMicroelectronics, STP40NE03L-20 Datasheet

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STP40NE03L-20

Manufacturer Part Number
STP40NE03L-20
Description
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
October 1997
ST P40NE03L-20
Symbol
dv/dt(
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
V
DM
V
V
T
P
DGR
I
I
T
DS
GS
st g
D
D
to t
( )
j
TYPE
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction T emperature
DS(on)
” SINGLE FEATURE SIZE
= 0.014
V
30 V
DSS
<0.020
Parameter
R
DS(on)
o
c
C
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
40 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
40 A, di/dt
” POWER MOSFET
STP40NE03L-20
300 A/ s, V
-65 to 175
Value
0.53
160
175
30
30
40
28
80
TO-220
7
15
DD
V
(BR)DSS
1
2
, T
3
j
T
JMAX
W/
V/ns
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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STP40NE03L-20 Summary of contents

Page 1

... Total Dissipation Derating Factor dv/dt( ) Peak Diode Recovery voltage slope 1 T Storage Temperature Max. Operating Junction T emperature Pulse width limited by safe operating area October 1997 STP40NE03L-20 ” POWER MOSFET INTERNAL SCHEMATIC DIAGRAM = 100 ...

Page 2

... STP40NE03L-20 THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Junction-ambient t hj- amb R Thermal Resistance Case-sink thc Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting T ...

Page 3

... =4 Test Cond ition di/dt = 100 150 Thermal Impedance STP40NE03L-20 Min. Typ . Max 160 210 Min. Typ . Max 120 160 ns 155 ...

Page 4

... STP40NE03L-20 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP40NE03L-20 Normalized On Resistance vs Temperature 5/8 ...

Page 6

... STP40NE03L-20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP40NE03L-20 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/8 ...

Page 8

... STP40NE03L-20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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