STP75NE75FP STMicroelectronics, STP75NE75FP Datasheet

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STP75NE75FP

Manufacturer Part Number
STP75NE75FP
Description
Manufacturer
STMicroelectronics
Datasheet

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STP75NE75FP
Manufacturer:
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Part Number:
STP75NE75FP
Manufacturer:
ST
Quantity:
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Part Number:
STP75NE75FP
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0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
May 1999
STP75NE75
STP75NE75FP
Symbol
CHARACTERIZATION
I
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
SOLENOID AND RELAY DRIVERS
DC MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
V
dv/dt
DM
V
V
V
T
P
DGR
I
I
T
ISO
GS
s tg
DS
D
D
tot
TYPE
( )
j
N - CHANNEL 75V - 0.01 - 75A TO-220/TO-220FP
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating F actor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
75 V
75 V
= 0.01
DSS
unique
< 0.013
< 0.013
R
DS(on)
c
”Single
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
75 A
40 A
Feature
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
75 A, di/dt 300 A/ s, V
TO-220
STP75NE75
1.06
300
160
75
53
POWER MOSFET
1
STP75NE75FP
2
-65 to 175
3
Value
175
DD
75
75
STP75NE75
7
20
STP75NE75FP
V
(BR)DSS
TO-220FP
2000
0.37
160
40
28
50
, T
j
T
JMAX
1
W /
Un it
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP75NE75FP Summary of contents

Page 1

... TO-220 INTERNAL SCHEMATIC DIAGRAM Value STP75NE75 100 300 160 1.06 7 -65 to 175 175 ( ) di/dt 300 TO-220FP Un it STP75NE75FP 160 0. 2000 V V/ (BR)DSS j JMAX 1/9 ...

Page 2

STP75NE75/FP THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l Parameter I Avalanche Current, Repetitive or Not-Repetitive ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter t Turn-on Delay T ime V d(on Rise Time (Resistive Load, see fig Total G ate Charge Gate-Source Charge gs Q ...

Page 4

STP75NE75/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP75NE75/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

STP75NE75/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 8

STP75NE75/FP TO-220FP MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ...

Page 9

... STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informat i on previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – ...

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