STW9NB80 STMicroelectronics, STW9NB80 Datasheet
STW9NB80
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STW9NB80 Summary of contents
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... T Max. Operating Junction Temperature Pulse width limited by safe operating area July 1999 PowerMESH I D 9.3 A TO-247 INTERNAL SCHEMATIC DIAGRAM Value 100 -65 to 150 (1) I 9.3A, di/dt 200A STW9NB80 MOSFET 800 V 800 9 190 V/ns o ...
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... STW9NB80 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy ...
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... Test Con ditions Min. = 640 4 Test Con ditions Min 9.3 A di/dt = 100 100 150 C j Thermal Impedance STW9NB80 T yp. Max. Unit yp. Max. Unit yp. Max. ...
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... STW9NB80 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STW9NB80 Normalized On Resistance vs Temperature 5/8 ...
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... STW9NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... DIM. MIN. TYP. A 4.7 D 2 10.9 H 15.3 L 19.7 L3 14.2 L4 34 inch MAX. MIN. TYP. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 0.429 15.9 0.602 20.3 0.776 14.8 0.559 1.362 0.217 3 0.079 STW9NB80 MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.626 0.779 0.582 0.118 P025P 7/8 ...
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... STW9NB80 Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...