74ALVT16827DL,518 NXP Semiconductors, 74ALVT16827DL,518 Datasheet

IC BUFF DVR TRI-ST 20BIT 56SSOP

74ALVT16827DL,518

Manufacturer Part Number
74ALVT16827DL,518
Description
IC BUFF DVR TRI-ST 20BIT 56SSOP
Manufacturer
NXP Semiconductors
Series
74ALVTr
Datasheet
1.74ALVT16827DGG118.pdf (16 pages)

Specifications of 74ALVT16827DL,518

Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
2
Number Of Bits Per Element
10
Current - Output High, Low
8mA, 8mA
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
56-SSOP
Logic Family
ALVT
Number Of Channels Per Chip
20
Polarity
Non-Inverting
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
High Level Output Current
- 32 mA
Low Level Output Current
64 mA
Minimum Operating Temperature
- 40 C
Number Of Lines (input / Output)
20 / 20
Output Type
3-State
Propagation Delay Time
3 ns at 2.5 V, 2.3 ns at 3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
74ALVT16827DL-T
74ALVT16827DL-T
935210040518
1. General description
2. Features
3. Quick reference data
The 74ALVT16827 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive. It is designed for V
at 2.5 V or 3.3 V with I/O compatibility to 5 V.
The 74ALVT16827 20-bit buffers provide high performance bus interface buffering for wide
data/address paths or buses carrying parity. They have NOR Output Enables (nOE1 and
nOE2) for maximum control flexibility.
Table 1:
GND = 0 V; T
Symbol Parameter
t
t
C
PLH
PHL
I
74ALVT16827
20-bit buffer/line driver; non-inverting; 3-state
Rev. 03 — 2 June 2005
Multiple V
5 V I/O compatible
Live insertion and extraction permitted
3-state output buffers
Power-up 3-state
Output capability: +64 mA and 32 mA
Latch-up protection:
ElectroStatic Discharge (ESD) protection:
Bus hold data inputs eliminate need for external pull-up resistors to hold unused inputs
JESD 78 exceeds 500 mA
MIL STD 883 Method 3015: exceeds 2000 V
Machine model: exceeds 200 V
propagation delay nAx
to nYx
propagation delay nAx
to nYx
input capacitance on
DIR, OE
Quick reference data
amb
CC
= 25 C.
and GND pins minimize switching noise
Conditions
C
C
C
C
V
I
L
L
L
L
= 0 V or V
= 50 pF; V
= 50 pF; V
= 50 pF; V
= 50 pF; V
CC
CC
CC
CC
CC
= 2.5 V
= 3.3 V
= 2.5 V
= 3.3 V
Min
1.0
0.7
1.0
0.8
-
Product data sheet
Typ
2.0
1.5
2.0
1.6
3
Max
2.9
2.2
3.0
2.3
-
CC
operation
Unit
ns
ns
ns
ns
pF

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74ALVT16827DL,518 Summary of contents

Page 1

Rev. 03 — 2 June 2005 1. General description The 74ALVT16827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive designed for V at ...

Page 2

Philips Semiconductors Table 1: GND = Symbol Parameter Ordering information Table 2: Ordering information Type number Package Temperature range 74ALVT16827DL +85 C SSOP56 74ALVT16827DGG +85 C ...

Page 3

Philips Semiconductors nA0 nOE0 nOE1 nY0 Fig 3. Logic diagram 6. Pinning information 6.1 Pinning Fig 4. Pin configuration 9397 750 15122 Product data sheet 20-bit buffer/line driver; non-inverting; 3-state nA1 nA2 nA3 nA4 nA5 nY1 nY2 nY3 nY4 nY5 ...

Page 4

Philips Semiconductors 6.2 Pin description Table 3: Symbol 1OE0 1Y0 1Y1 GND 1Y2 1Y3 V CC 1Y4 1Y5 1Y6 GND 1Y7 1Y8 1Y9 2Y0 2Y1 2Y2 GND 2Y3 2Y4 2Y5 V CC 2Y6 2Y7 GND 2Y8 2Y9 2OE0 2OE1 2A9 ...

Page 5

Philips Semiconductors Table 3: Symbol 2A2 2A1 2A0 1A9 1A8 1A7 GND 1A6 1A5 1A4 V CC 1A3 1A2 GND 1A1 1A0 1OE1 7. Functional description 7.1 Function table Table 4: Input nOEx [ don’t ...

Page 6

Philips Semiconductors Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V output voltage O I output current O T junction temperature j T storage temperature stg [1] The performance capability of ...

Page 7

Philips Semiconductors 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referred to GND (ground = 0 V). T Symbol Parameter [ 3 input clamp voltage IK V HIGH-level ...

Page 8

Philips Semiconductors Table 7: Static characteristics At recommended operating conditions; voltages are referred to GND (ground = 0 V). T Symbol Parameter [ 2 input clamp voltage IK V HIGH-level output OH voltage ...

Page 9

Philips Semiconductors 11. Dynamic characteristics Table 8: Dynamic characteristics GND = 2 Symbol Parameter V = 3 propagation delay PLH ...

Page 10

Philips Semiconductors 12. AC waveforms Fig 5. The input (nAx) to output (nYx) propagation delays Fig 6. The 3-state output enable and disable times 9397 750 15122 Product data sheet nAx input PLH nYx output V V ...

Page 11

Philips Semiconductors a. Input pulse definition b. Test circuit Fig 7. Load circuitry for switching times Table 9: Input whichever is less 9397 750 15122 Product data sheet negative V ...

Page 12

Philips Semiconductors 13. Package outline SSOP56: plastic shrink small outline package; 56 leads; body width 7 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) A UNIT max. ...

Page 13

Philips Semiconductors TSSOP56: plastic thin shrink small outline package; 56 leads; body width 6 pin 1 index 1 DIMENSIONS (mm are the original dimensions). A UNIT max. 0.15 1.05 mm ...

Page 14

Philips Semiconductors 14. Revision history Table 10: Revision history Document ID Release date 74ALVT16827_3 20050602 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 15

Philips Semiconductors 15. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 16

Philips Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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