APTM20UM09S Advanced Power Technology, APTM20UM09S Datasheet
APTM20UM09S
Related parts for APTM20UM09S
APTM20UM09S Summary of contents
Page 1
... Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance T = 25° 80° 25°C c APT website – http://www.advancedpower.com APTM20UM09S ® MOSFETs DSon Max ratings Unit 200 V 195 145 A 780 ± ...
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... 133V 125°C di/dt = 400A/µ 120A T = 25° 133V 125°C di/dt = 400A/µs j APT website – http://www.advancedpower.com APTM20UM09S Min Typ Max Unit 200 V 400 µA 2000 ±400 nA Min Typ Max Unit 12 ...
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... I = 100A T = 25° 133V 125°C di/dt = 200A/µs j Transistor Series diode Parallel diode M4 M6 APT website – http://www.advancedpower.com APTM20UM09S Min Typ Max Unit 100 A 1 1.1 1 110 200 nC 840 Min Typ Max Unit 0.16 ° ...
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... Package outline Mounting holes: 4xÆ6.5 mm APT website – http://www.advancedpower.com APTM20UM09S 4 – 7 ...
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... DC Drain Current vs Case Temperature 200 160 120 =20V GS 0 300 400 25 APT website – http://www.advancedpower.com APTM20UM09S 0 Transfert Characteristics > I (on)xR (on)MAX =125° =25° =-55° ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APT website – http://www.advancedpower.com APTM20UM09S ON resistance vs Temperature 2.5 V =10V 195A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...
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... Source to Drain Diode Forward Voltage 10000 V =133V DS D=50% R =1.2Ω 1000 G T =125°C J 100 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 APT website – http://www.advancedpower.com APTM20UM09S Rise and Fall times vs Current V =133V DS R =1.2Ω =125° L=100µ 100 150 200 250 ...