APTM20UM09S Advanced Power Technology, APTM20UM09S Datasheet - Page 6

• Manufacturer Part Number: APTM20UM09S
• Description: Single switch Series & parallel diodes MOSFET Power Module
• Manufacturer: Advanced Power Technology

100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
T
J
DS
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
APT website – http://www.advancedpower.com
30
40
Coss
Crss
Ciss
50
1000
100
10
1
12
10
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
Gate Charge vs Gate to Source Voltage
1
-50 -25
0
limited by
R
DSon
Single pulse
T
V
I
I
T
D
J
V
D
GS
= 195A
=150°C
ON resistance vs Temperature
Maximum Safe Operating Area
J
T
=195A
DS
=25°C
APTM20UM09S
=10V
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
60
0
Gate Charge (nC)
10
25
120
50
V
75 100 125 150
DS
100
=100V
180
V
DS
=40V
100µs
1ms
10ms
DC line
V
DS
=160V
1000
240
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