STP3NA60 STMicroelectronics, STP3NA60 Datasheet - Page 3

• Manufacturer Part Number: STP3NA60
• Description: N-Channel Enhancement Mode Fast Power MOS Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Symbol
Symbol
Symbol
(di/dt)
I
V
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
I
Q
RRM
Q
S D
t
t
t
t
rr
c
r
gs
gd
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 18
= 18
= 18
= 3 A
= 2.9 A
= 300 V
= 400 V
= 480 V
= 480 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
di/dt = 100 A/ s
V
GS
V
I
V
I
V
I
I
GS
D
D
D
D
T
GS
GS
= 10 V
j
= 1.5 A
= 3 A
= 3 A
= 3 A
= 0
= 150
= 10 V
= 10 V
Safe Operating Areas for ISOWATT220
o
V
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
300
460
5.6
14
25
22
13
24
12
24
6
9
STP3NA60/FI
Max.
Max.
Max.
11.6
2.9
1.5
20
35
30
18
34
17
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10