PD45128168G5-A75A-9JF Elpida Memory, Inc., PD45128168G5-A75A-9JF Datasheet
PD45128168G5-A75A-9JF
Related parts for PD45128168G5-A75A-9JF
PD45128168G5-A75A-9JF Summary of contents
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... Document No. E0031N30 (Ver. 3.0) Date Published August 2001 CP (K) Printed in Japan DATA SHEET MOS INTEGRATED CIRCUIT 4-bank, LVTTL 4 4, 4,194,304 8 4, 2,097,152 16 Elpida Memory, Inc joint venture DRAM company of NEC Corporation and Hitachi, Ltd. 4 (word bit bank), respectively. ...
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Ordering Information Part number (word PD45128441G5-A75A-9JF PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128441G5-A10-9JF PD45128841G5-A75A-9JF PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128841G5-A10-9JF PD45128163G5-A75A-9JF PD45128163G5-A75-9JF PD45128163G5-A80-9JF PD45128163G5-A10-9JF PD45128441G5-A75L-9JF PD45128441G5-A80L-9JF PD45128841G5-A75L-9JF PD45128841G5-A80L-9JF PD45128163G5-A75L-9JF PD45128163G5-A80L-9JF 2 PD45128441, 45128841, 45128163 Organization Clock frequency bit bank) MHz (MAX 133 133 125 ...
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Part Number [ x4 PD45128841G5 - A75L NEC Memory Synchronous DRAM Memory density 128 : 128M bits Organization Number of banks banks Interface 1 : LVTTL [ x16 ] ...
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Pin Configurations /xxx indicates active low signal. 54-pin Plastic TSOP (II) (10.16mm (400 DQ0 DQ1 /WE /CAS ...
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PD45128841] 54-pin Plastic TSOP (II) (10.16mm (400)) 4M words DQ0 DQ1 DQ2 DQ3 11 V ...
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Plastic TSOP (II) (10.16mm (400 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 V CC LDQM /WE /CAS /RAS /CS BA0(A13) BA1(A12) A10 A0 A1 ...
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Block Diagram CLK Clock Generator CKE Address Mode Register /CS /RAS /CAS /WE PD45128441, 45128841, 45128163 Bank D Bank C Bank B Row Address Buffer & Refresh Bank A Counter Sense Amplifier Column Decoder & Column Latch Circuit Address Buffer ...
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Input / Output Pin Function ........................................................................................................... 10 2. Commands ...................................................................................................................................... 11 3. Simplified State Diagram ............................................................................................................... 14 4. Truth Table ...................................................................................................................................... 15 4.1 Command Truth Table ............................................................................................................................ 15 4.2 DQM Truth Table ..................................................................................................................................... 15 4.3 CKE Truth Table ...................................................................................................................................... ...
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Electrical Specifications ................................................................................................................ 34 13.1 AC Parameters for Read Timing ......................................................................................................... 39 13.2 AC Parameters for Write Timing ........................................................................................................ 41 13.3 Relationship between Frequency and Latency ................................................................................. 42 13.4 Mode Register Set ............................................................................................................................... 43 13.5 Power on Sequence and ...
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Input / Output Pin Function Pin name Input / Output CLK Input CLK is the master clock input. Other inputs signals are referenced to the CLK rising edge. CKE Input CKE determine validity of the next CLK (clock). If ...
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Commands Mode register set command (/CS, /RAS, /CAS, /WE = Low) The PD45128xxx has a mode register that defines how the device operates. In this command, A0 through A11, BA0(A13) and BA1(A12) are the data input pins. After power ...
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Write command (/CS, /CAS, /WE = Low, /RAS = High) If the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. The first ...
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Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High) After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the PD45128xxx exits the self refresh mode. During self refresh mode, ...
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Simplified State Diagram MRS Mode Register Set Write CKE WRITE WRITE SUSPEND CKE CKE WRITEA WRITEA SUSPEND CKE Precharge POWER ON 14 PD45128441, 45128841, 45128163 Self Refresh REF CBR (Auto) IDLE Refresh Power Down CKE Active ROW Power CKE ...
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Truth Table 4.1 Command Truth Table Function Symbol Device deselect DESL No operation NOP Burst stop BST Read READ Read with auto precharge READA Write WRIT Write with auto precharge WRITA Bank activate ACT Precharge select bank PRE Precharge ...
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Note1 4.4 Operative Command Table Current state /CS /RAS /CAS /WE Idle ...
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Current state /CS /RAS /CAS /WE Read with auto H precharge ...
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Current state /CS /RAS /CAS /WE Write recovering Write recovering H with auto precharge L ...
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Command Truth Table for CKE Current State CKE /CS /RAS /CAS /WE n – Self refresh Self refresh recovery ...
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Initialization The synchronous DRAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 100 s or longer pause must precede any signal toggling. (2) After the pause, all ...
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Programming the Mode Register The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0(A13) and BA1(A12) as data inputs. The register retains data until it is reprogrammed or the device loses ...
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Mode Register BA0 BA1 (A13) (A12) A11 A10 BA0 BA1 (A13) (A12) A11 A10 LTMODE x x BA0 BA1 ...
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Burst Length and Sequence [Burst of Two] Starting address Sequential addressing sequence (column address A0, binary [Burst of Four] Starting address Sequential addressing sequence (column address A1 - A0, binary [Burst of Eight] ...
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Address Bits of Bank-Select and Precharge Row (Activate command (Precharge command) Col (/CAS strobes) 24 PD45128441, 45128841, 45128163 ...
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Precharge The precharge command can be issued anytime after t Soon after the precharge command is issued, precharge operation performed and the synchronous DRAM enters the idle state after t is satisfied. The parameter t RP The earliest timing ...
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Auto Precharge During a read or write command cycle, A10 controls whether auto precharge is selected. A10 high in the Read or Write command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected ...
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Write with Auto Precharge During a write cycle, the auto precharge starts at the timing that is equal to the value of the t data word input to the device CLK /CAS latency = 2 Command WRITA ...
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Read / Write Command Interval 11.1 Read to Read Command Interval During a read cycle, when new Read command is issued, it will be effective after /CAS latency, even if the previous read operation does not completed. READ will ...
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Write to Read Command Interval Write command and Read command interval is also 1 cycle. Only the write data before Read command will be written. The data bus must be Hi-Z at least one cycle prior to the first ...
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Read to Write Command Interval During a read cycle, READ can be interrupted by WRITE. The Read and Write command interval is 1 cycle minimum. There is a restriction to avoid data conflict. The Data bus must be Hi-Z ...
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Burst Termination There are two methods to terminate a burst operation other than using a Read or a Write command. One is the burst stop command and the other is the precharge command. 12.1 Burst Stop Command During a ...
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Precharge Termination 12.2.1 Precharge Termination in READ Cycle During a read cycle, the burst read operation is terminated by a precharge command. When the precharge command is issued, the burst read operation is terminated and precharge starts. The same ...
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Precharge Termination in WRITE Cycle During a write cycle, the burst write operation is terminated by a precharge command. When the precharge command is issued, the burst write operation is terminated and precharge starts. The same bank can be ...
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Electrical Specifications All voltages are referenced to V (GND). SS After power up, wait more than 100 s and then, execute Power on sequence and CBR (auto) Refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Voltage ...
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DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Operating current I Burst length = 1, CC1 t RC One bank active Precharge standby current I P CKE CC2 in power down mode I PS CKE CC2 Precharge ...
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DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Input leakage current (L) All other pins not under test = 0 V Output leakage current (L) High level output voltage ...
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Synchronous Characteristics Parameter Symbol Clock cycle time /CAS latency = 3 t /CAS latency = 2 t Access time from CLK /CAS latency = 3 t /CAS latency = 2 t CLK high level width CLK low level width Data-out ...
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Asynchronous Characteristics Parameter Symbol ACT to REF/ACT command period (operation) REF to REF/ACT command period (refresh) ACT to PRE command period PRE to ACT command period Delay time ACT to READ/WRITE command ACT (one) to ACT (another) command period Data-in ...
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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi RCD Activate Read Command Command ...
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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi RCD Activate Read with Command ...
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CLK CKE t CKS t t CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi RCD t RRD Write with ...
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Relationship between Frequency and Latency Speed version Clock cycle time [ns] Frequency [MHz] 133 /CAS latency [t ] RCD /RAS latency (/CAS latency + [t ]) RCD [ RC1 [t ] RAS [t ] RRD ...
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CLK CKE H t RSC 2 CLK (MIN.) /CS /RAS /CAS /WE BA0 BA1 A10 ADDRESS KEY ADD DQM Hi-Z DQ Precharge Mode Activate All Banks Register Set Command Command Command is valid t ...
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CLK Clock cycle is necessary CKE t High level is necessary RSC /CS /RAS /CAS /WE BA0 BA1 A10 ADDRESS KEY ADD DQM High level is necessary Hi-Z DQ Precharge Mode CBR (Auto) All Banks Register Set Refresh Command Command ...
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CLK CKE H /CS /RAS /CAS /WE BA0 L BA1 L A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ QAa1 Activate Read Command Command for Bank A for Bank T10 T11 ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 T12 ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK Command Command SUSPENDED for Bank A for Bank ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK Command Command SUSPENDED for Bank A for Bank ...
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CLK t CKSP CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Power Down Power Down Mode ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi-Z DQ Precharge CBR (Auto) Refresh Command (if necessary ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM L Hi-Z DQ Precharge Self Refresh Command Entry (if necessary Self ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z DDa1 DDa2 DDa3 DDa4 DDb1 DDb2 DQ Activate Write Command Command for Bank D for Bank D ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z DDa1 DDa2 DDa3 DDa4 DQ Activate Write Command Command for Bank D for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa DQM L Hi-Z QDa1 QDa2 QDa3 QDa4 QDa5 QDa6 QDa7 QDa8 QBa1 QBa2 QBa3 QBa4 QBa5 DQ Activate Read Command ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RBa ADD RBa CBa L DQM Hi-Z DQ Activate Read Command Command for Bank B for Bank T10 T11 ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L DQM Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L DQM Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 T11 ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Aa1 Activate Read Command Command for Bank A for Bank A Activate Command for ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Activate Command for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa DQM L Hi-Z Aa1 Aa2 Aa3 Aa4 DQ Activate Write Activate Command Command Command for Bank A for ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa DQM L Hi-Z Aa1 Aa2 Aa3 DQ Activate Write Command Command for Bank A for Bank A Activate ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 RAa RDa A10 ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command Read for Bank A for Bank D Command for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Read Command for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Write Command Auto Precharge ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Write Command for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi Activate Read Activate Command Command Command for Bank A for Bank A for ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa L DQM Hi-Z DQ Activate Read Activate Command Command Command for Bank A for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa Aa+1 Aa+2 DQ Activate Write Activate Command Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa DQM L Hi-Z Aa Aa+1 Aa+2 DQ Activate Write Activate Command Command Command for Bank A for Bank ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Byte Command Command not Read for Bank D for Bank ...
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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Command Command Byte for Bank D for Bank D not Read ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi-Z DQ Qa1 Activate Read Command Command for Bank D for Bank T10 T11 T12 T13 Qa2 ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD DQM Hi-Z DQ Activate Read Command Command for Bank D for Bank T10 T11 T12 T13 Qa1 Qa2 ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DQ QAa1 QDa1 QAb1 QAb2 QDb1 QDb2 QAc1 Activate Activate Command Command for ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DQ Activate Activate Command Command for Bank D for Bank A Read Read ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DAa1 DDa1 DAb1 DQ Activate Activate Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb DQM L Hi-Z DAa1 DDa1 DAb1 DQ Activate Activate Command Command for Bank A for Bank ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa DQM L Hi-Z DQ DAa1 DAa2 DAa3 DAa4 Activate Write Command Command for Bank A for Bank A PRE Termination ...
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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RAa CAa ADD L DQM Hi-Z DQ DAa1 DAa2 DAa3 Write Activate Command Command for Bank A for Bank A PRE Termination of ...
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Package Drawing 54-PIN PLASTIC TSOP (II) (10.16 mm (400 NOTES 1. Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 2. Dimension ...
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Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the PD45128xxx. Type of Surface Mount Device PD45128xxxG5 : 54-pin Plastic TSOP (II) (10.16mm (400)) 86 PD45128441, 45128841, 45128163 Data Sheet E0031N30 ...
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... CC6 AC Characteristics Test Conditions -A75 specs Timing chart (/CAS latency = 3) Package Drawing t spec (-A10) RC1 Republished by Elpida Memory, Inc. -AxxL (Low power) -10B specs I -AxxL (Low power) CC6 -A75A and -A75AL (Low power) -A75A specs Data Sheet E0031N30 ...
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PD45128441, 45128841, 45128163 Data Sheet E0031N30 ...
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PD45128441, 45128841, 45128163 Data Sheet E0031N30 89 ...
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PD45128441, 45128841, 45128163 Data Sheet E0031N30 ...
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NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop ...
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... Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in ...