BUT11AI NXP Semiconductors, BUT11AI Datasheet

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BUT11AI

Manufacturer Part Number
BUT11AI
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUT11AI.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUT11AI
Manufacturer:
NXP
Quantity:
11 550
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
BUT11AI
Manufacturer:
ST
0
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high
frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
systems etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
April 2002
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
stg
j
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector Saturation current
Inductive fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
Con
1 2 3
mb
mb
BE
BE
1
= 2.5 A; I
= 2.5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
= 0.33 A
Bon
= 0.5 A
SYMBOL
b
TYP.
TYP.
MIN.
0.08
Product specification
2.5
-65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
e
1000
c
1000
0.15
1.25
450
100
450
100
150
150
1.5
10
10
60
BUT11AI
5
5
2
4
Rev 2.000
UNIT
UNIT
UNIT
K/W
K/W
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
s

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BUT11AI Summary of contents

Page 1

... April 2002 CONDITIONS ˚ 0.5 A Con Bon PIN CONFIGURATION tab CONDITIONS ˚C mb CONDITIONS in free air 1 Product specification BUT11AI TYP. MAX. UNIT - 1000 V - 450 100 W - 1.5 V 2.5 A 0.08 0.15 s SYMBOL MIN. ...

Page 2

... Con Bon - 2 0 Con Bon - 100 ˚ 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 100 Fig.2. Oscilloscope display for V CEOsust 2 Product specification BUT11AI MIN. TYP. MAX 1.0 CESMmax ; - - 2.0 CESMmax - - 10.0 450 - - - 1 1 TYP ...

Page 3

... Fig.8. Reverse bias safe operating area Product specification ICon toff IBon -IBoff Normalised Derating % with heatsink compound P tot 100 Ths / C breakdown curves BUT11AX 0 400 800 VCE / V BUT11AI t t 120 140 1200 max Rev 2.000 ...

Page 4

... April 2002 BUT11AX 10 1 0.1 10 100 0.01 CE 1E- 100 (2) 500 ms DC III 1000 ˚ Product specification Zth / (K/W) 0.5 D= 0.2 0 1E-04 1E- Fig.11. Transient thermal impedance f(t); parameter j-hs BUT11AI 1E+ Rev 2.000 ...

Page 5

... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2002 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.12. TO220AB; pin 2 connected to mounting base. 5 Product specification BUT11AI 4,5 max 1,3 5,9 min 0,6 2,4 Rev 2.000 15,8 max ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BUT11AI Rev 2.000 ...

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