BUT11F NXP Semiconductors, BUT11F Datasheet

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BUT11F

Manufacturer Part Number
BUT11F
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
[INCLUDE]
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
August 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
hs
SYMBOL
V
C
C
CM
Csat
f
C
CM
B
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
isol
th j-hs
th j-a
isol
= 25 ˚C unless otherwise specified
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
CONDITIONS
V
T
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
BE
hs
BE
hs
1
= 0 V
= 0 V
25 ˚C
25 ˚C
MIN.
-
-
TYP.
TYP.
TYP.
MIN.
Product specification
-65
55
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
MAX.
1500
3.95
850
400
800
850
450
150
150
1.5
10
20
10
20
5
3
5
2
4
-
-
BUT11F
Rev 1.000
UNIT
UNIT
UNIT
UNIT
K/W
K/W
ns
pF
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
V

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BUT11F Summary of contents

Page 1

... Capacitance from T2 to external MHz isol heatsink August 1997 CONDITIONS ˚C hs CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air CONDITIONS R.H. 65% ; clean and dustfree 1 Product specification BUT11F TYP. MAX. UNIT - 850 V - 400 1 ...

Page 2

... A; L Con Bon - 2 0 Con Bon - 100 ˚ 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 100 Fig.2. Oscilloscope display for V CEOsust 2 Product specification BUT11F MIN. TYP. MAX 1 2 450 - - - - 1 1 TYP. MAX. = 0.5 A ...

Page 3

... Fig. 7. Normalised power derating and second VCC T.U. Fig.8. Reverse bias safe operating area Product specification BUT11F ICon toff IBon -IBoff Normalised Derating % with heatsink compound P tot 100 120 Ths / C breakdown curves ...

Page 4

... FE C August 1997 BUT11AX 100 ICM max 100 CE 0.1 0.01 1 Fig.10. Forward bias safe operating area. T (1) ( III NB: 4 Product specification BUT11F = 0.01 IC max 100 us ( (2) 500 ms DC III 1000 10 100 max and P peak max lines ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor Fig.11. Typical base-emitter and collector-emitter saturation voltages. Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. V August 1997 BEsat C CEsat f(I ); parameter I CEsat B 5 Product specification BUT11F C Rev 1.000 ...

Page 6

... Philips Semiconductors Silicon Diffused Power Transistor Fig.13. Typical base-emitter saturation voltage. August 1997 V = f(I ); parameter I BEsat B C Fig.14. Transient thermal impedance f(t); parameter j- Product specification BUT11F Rev 1.000 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1997 10.2 max 5.7 max 3.2 3.0 4 0.9 M 0.4 0.7 2.54 5.08 top view 7 Product specification BUT11F 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 seating plane 13.5 min 0.55 max 1.3 Rev 1.000 17 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1997 8 Product specification BUT11F Rev 1.000 ...

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