BAW79 Infineon Technologies Corporation, BAW79 Datasheet - Page 2

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BAW79

Manufacturer Part Number
BAW79
Description
Silicon Switching Diodes
Manufacturer
Infineon Technologies Corporation
Datasheet

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Electrical Characteristics at T
Parameter
DC Characteristics
AC Characteristics
Breakdown voltage
I
Reverse current
V
V
Forward voltage
I
I
1
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
(BR)
F
F
F
For calculation of R
R
R
R
L
= 1 A
= 2 A
= 200mA, I
= 400 V
= 400 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA

R
A
= 200mA, measured at I
= 150 °C
thJA
Ι
F
D.U.T.
please refer to Application Note Thermal Resistance
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 20mA
Puls generator: t
Oscillograp: R = 50
2
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
C
p

= 10µs, D = 0.05,
min.
t

1pF
400
r
= 0.6ns, R
-
-
-
-
, t
-
-
r
= 0.35ns
BAW78.../BAW79...
Values
,
typ.
10
-
-
-
-
-
1
i
= 50
max.
Feb-03-2003
1.6
50
2
1

-
-
-
Unit
V
µA
V
pF
µs

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