PEMD10 NXP Semiconductors, PEMD10 Datasheet - Page 5

• Manufacturer Part Number: PEMD10
• Description: Npn/pnp Resistor-equipped Transistors; R1 = 2.2 Kohm, R2 = 47 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
2004 Apr 15
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
c
NPN/PNP resistor-equipped transistors;
R1 = 2.2 k , R2 = 47 k
= 25 C; unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
PARAMETER
V
V
V
V
V
I
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
5
CONDITIONS
C
C
B
C
E
B
B
E
= 0.25 mA
= 0 A
= 10 mA
= 100 A
C
= 0 A
= 0 A
= 0 A; T
= i
= 5 mA
e
= 0 A;
j
= 150 C
100
1.1
1.54
17
MIN.
PEMD10; PUMD10
0.6
0.75
2.2
21
TYP.
Product specification
100
1
50
180
100
0.5
2.86
26
2.5
3
MAX.
nA
mV
V
V
k
pF
pF
UNIT
A
A
A