ICE1PD265G Infineon Technologies Corporation, ICE1PD265G Datasheet - Page 4

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ICE1PD265G

Manufacturer Part Number
ICE1PD265G
Description
Power Factor Controller + Cool- Mos Boostset Ic For High Power Factor And Low Thd
Manufacturer
Infineon Technologies Corporation
Datasheet
Pin Connections
Pin Description
Pin1,16 GND (Ground)
The GND pins are internally connected via the lead frame
Pin 2 VSENSE (voltage amplifier inverting input)
VSENSE is connected via a resistive divider to the boost converter output. With a capacitor connected to
VAOUT the internal error amplifier acts as an integrator.
Pin 3 VAOUT (voltage amplifier output)
VAOUT is connected internally to the first multiplier input. To prevent overshoot the input voltage is
clamped internally at 5V. Input voltage less then 2.2V shuts the gate driver down. If the current flowing into
this pin is exceeding an internal threshold the multiplier output voltage is reduced to prevent the
MOSFET from overvoltage damage.
Pin 4 MULTIN (multipier input)
MULTIN is the second multiplier input and is connected via a resistive divider to the rectifier output voltage.
Pin 5, 12
not connected
Pin 6,7,8,9,10,11 DRAIN (drain connection of internal CoolMOS)
The DRAIN pins are internally connected via the leadframe. Be aware of 650V input voltage!
Version 1.0
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
n.c.
Symbol
GND
VSENSE
VAOUT
MULTIN
n.c.
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
ISENSE
VCC
DETIN
GND
Function
Voltage amplifier inverting input
Voltage amplifier output
Multiplier input
Positive voltage supply
Ground
650V Drain
650V Drain
650V Drain
650V Drain
650V Drain
650V Drain
Current sense input + Source
Zero current detector input
Ground
4
1 GND
2 VSENSE
3 VAOUT
4 MULTIN
5 n.c.
6 DRAIN
7 DRAIN
8 DRAIN
Do not touch DRAIN pins on
application board: 650V
P-DSO-16-10
ICE1PD265G
10 Sep 2001
16 GND
15 DETIN
14 VCC
13 ISENSE
12 n.c.
11 DRAIN
10 DRAIN
9 DRAIN

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