PDTA114Y NXP Semiconductors, PDTA114Y Datasheet - Page 5

• Manufacturer Part Number: PDTA114Y
• Description: Pdta114y Series Pnp Resistor-equipped Transistors; R1 = 10 K?, R2 = 47 K?
• Manufacturer: NXP Semiconductors

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −5 mA; I
= −100 μA; V
= −1 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
B
C
CE
E
B
B
= −0.25 mA
= 0
= −5 mA
= −10 V; f = 1 MHz −
CE
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
−
−
−
−
100
−
−
−1.4
7
3.7
MIN.
PDTA114Y series
−
−
−
−
−
−
−0.7
−0.8
10
4.7
−
TYP.
Product data sheet
−100
−1
−50
−150
−
−100
−0.5
−
13
5.7
3
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT