PBLS2001S NXP Semiconductors, PBLS2001S Datasheet - Page 6

• Manufacturer Part Number: PBLS2001S
• Description: Pbls2001s 20 V Pnp Biss Loadswitch
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
PBLS2001S_1
Product data sheet
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
Ceramic PCB, Al
values
4
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
2
Table 7.
T
O
Symbol Parameter
TR1; PNP low V
I
I
I
h
V
R
CBO
CES
EBO
amb
3
FE
3
CEsat
CEsat
, standard footprint
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
Characteristics
10
2
CEsat
(BISS) transistor
Rev. 01 — 3 August 2006
10
1
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 20 V; I
= 20 V; I
= 20 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
1
B
B
B
B
B
B
= 50 mA
= 100 mA
= 200 mA
= 300 mA
= 100 mA
= 200 mA
C
C
C
C
C
C
B
E
E
= 0 A
= 50 mA
= 0.1 A
= 0.5 A
= 1 A
= 2 A
= 3 A
BE
= 0 A
= 0 A;
= 0 V
10
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
220
220
200
150
100
-
-
-
-
-
-
-
20 V PNP BISS loadswitch
PBLS2001S
10
2
Typ
-
-
-
-
420
360
310
235
180
80
75
45
90
160
150
220
t
p
006aaa811
(s)
Max
-
-
-
-
-
130
120
100
50
100
100
75
140
255
240
355
10
3
Unit
nA
nA
nA
mV
mV
mV
mV
mV
m
m
A
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