BU506DF NXP Semiconductors, BU506DF Datasheet
BU506DF
Available stocks
Related parts for BU506DF
BU506DF Summary of contents
Page 1
... DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 ...
Page 2
... Philips Semiconductors Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS Horizontal deflection circuits of colour television receivers Line-operated switch-mode applications. PINNING (1) PIN DESCRIPTION 1 base 2 collector 3 emitter Note 1. All pins electrically isolated from mounting base. ...
Page 3
... C unless otherwise specified. j SYMBOL PARAMETER V collector-emitter sustaining CEOsust voltage V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat V diode forward voltage (BU506DF collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE Switching times in horizontal deflection circuit (see Fig.11) t storage time s t ...
Page 4
... Mounted without heatsink compound and force on centre of package Region of permissible DC operation Permissible extension for repetitive pulse operation. 1997 Aug Fig.2 Forward bias SOAR (no heatsink compound). 3 Product specification BU506F; BU506DF MGB933 (V) ...
Page 5
... Mounted with heatsink compound and force on centre of package Region of permissible DC operation Permissible extension for repetitive pulse operation. 1997 Aug Fig.3 Forward bias SOAR (with heatsink compound). 4 Product specification BU506F; BU506DF MGB934 (V) ...
Page 6
... handbook, halfpage V CEsat (V) MGE239 V CE (V) min V CEOsust (1) I (2) I (3) I Fig.7 5 Product specification BU506F; BU506DF 100 to 200 L horizontal oscilloscope vertical 300 Fig.5 Test circuit for collector-emitter sustaining voltage. 10 (1) (2) ( ...
Page 7
... V BEsat ( ( (1) I (2) I (3) I Fig.9 MGB877 handbook, halfpage (A) 6 Product specification BU506F; BU506DF 1.2 0.8 (1) (2) (3) 0 Base-emitter saturation voltage as a function of base current; typical values. I Csat t s Fig ...
Page 8
... Aug scale 17.0 7.9 10.2 5.7 5.08 2.54 16.4 7.5 9.6 5.3 REFERENCES JEDEC EIAJ TO-220 7 BU506F; BU506DF ( 14.3 4.8 0.9 3.2 10 13.5 4.0 0.5 3.0 EUROPEAN PROJECTION Product specification SOT186 1.4 4.4 0.4 1.2 4.0 ISSUE DATE 97-06-11 ...
Page 9
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 BU506F; BU506DF 8 Product specification ...
Page 10
... Philips Semiconductors Silicon diffused power transistors 1997 Aug 14 NOTES 9 Product specification BU506F; BU506DF ...
Page 11
... Philips Semiconductors Silicon diffused power transistors 1997 Aug 14 NOTES 10 Product specification BU506F; BU506DF ...
Page 12
Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...