BU505D NXP Semiconductors, BU505D Datasheet

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BU505D

Manufacturer Part Number
BU505D
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
DATA SHEET
BU505; BU505D
Silicon diffused power transistors
DISCRETE SEMICONDUCTORS
1997 Aug 13

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BU505D Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 ...

Page 2

... Philips Semiconductors Silicon diffused power transistors DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode. APPLICATIONS Horizontal deflection circuits of colour television receivers. PINNING PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter QUICK REFERENCE DATA ...

Page 3

... Aug 13 CONDITIONS open base see Fig.3 see Fig see Fig Fig.2 Transient thermal impedance. 3 Product specification BU505; BU505D MIN. MAX. UNIT 1500 V 700 2 +150 C 150 C MGB859 ...

Page 4

... SYMBOL PARAMETER V collector-emitter sustaining voltage see Figs 5 and 6 CEOsust V collector-emitter saturation voltage I CEsat V base-emitter saturation voltage BEsat V emitter-base voltage EBO V diode forward voltage (BU505D collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE f transition frequency T C collector capacitance c Switching times in horizontal defl ...

Page 5

... II - Permissible extension for repetitive pulse operation. (1) P and P lines. tot max tot peak max (2) Second breakdown limits. 1997 Aug 100 s 200 s I 500 s ( Fig.3 Forward bias SOAR. 5 Product specification BU505; BU505D MGB942 (V) ...

Page 6

... Hz 100 150 Fig.5 handbook, halfpage i C MGE239 (V) min V CEOsust 6 Product specification BU505; BU505D 50 V 100 to 200 L horizontal oscilloscope vertical 300 MGE252 Test circuit for collector-emitter sustaining voltage. I Csat Fig.7 Switching time waveforms. ...

Page 7

... Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 1997 Aug scale 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ TO-220AB 7 Product specification BU505; BU505D ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 97-06-11 SOT78 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 BU505; BU505D 8 Product specification ...

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... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 NOTES 9 Product specification BU505; BU505D ...

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... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 NOTES 10 Product specification BU505; BU505D ...

Page 11

... Philips Semiconductors Silicon diffused power transistors 1997 Aug 13 NOTES 11 Product specification BU505; BU505D ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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