VN770 STMicroelectronics, VN770 Datasheet

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VN770

Manufacturer Part Number
VN770
Description
Quad Smart Power Solid State Relay For Complete H-bridge Configurations
Manufacturer
STMicroelectronics
Datasheet

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* Total resistance of one side in bridge configuration
DESCRIPTION
The VN770 is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two Power
MOSFETs. The double high side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are made by using the new advanced
strip lay-out technology. This device is suitable to
drive a DC motor in a bridge configuration as well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V
DUAL HIGH-SIDE SWITCH
From the falling edge of the input signal, the
status output, initially low
condition
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
October 1998
VN770
IDEAL AS A LOW VOLTAGE BRIDGE
VERY LOW STAND-BY POWER
DISSIPATION
OVER-CURRENT PROTECTED
STATUS FLAG DIAGNOSTICS ON UPPER
SIDE
OPEN DRAIN DIAGNOSTICS OUTPUT
UNDER-VOLTAGE PROTECTION
SUITABLE AS QUAD SWITCH
T YPE
(overtemperature
R
0.240
DS( on)
FOR COMPLETE H-BRIDGE CONFIGURATIONS
CC
.
*
QUAD SMART POWER SOLID STATE RELAY
I
9 A
OUT
to signal a fault
or
tpol
) respectively.
open
26 V
V
CC
load
MOS off at a minimum junction temperature of
140
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
P
where f = switching frequency and
V
In this device if the GND pin is disconnected, with
V
off.
Power MOSFETs
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The devices can be used as a
switch from DC to very high frequency.
dem
demag
CC
o
not exceeding 16V, both channel will switch
= 0.5 L
C. When this temperature returns to 125
= demagnetization voltage.
load
(I
load
)
SO-28
2
[(V
CC
+V
demag
VN770
)/V
demag
demag
] f
1/10
o
C
)

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VN770 Summary of contents

Page 1

... SIDE OPEN DRAIN DIAGNOSTICS OUTPUT UNDER-VOLTAGE PROTECTION SUITABLE AS QUAD SWITCH DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology ...

Page 2

... VN770 BLOCK DIAGRAM 2/10 ...

Page 3

... Input of Switch 2 (high-side switch) 12, 14, 15, 18 DRAIN 4 Drain of Switch 4 (low-side switch) 13 INPUT 4 Input of Switch 4 (low-side switch) 16 URCE 4 Source of Switch 4 (low-side switch) 20 URCE 2 Source of Switch 2 (high-side switch) 22 URCE 1 Source of Switch 1 (high-side switch) 26 URCE 3 Source of Switch 3 (low-side switch) VN770 FUNCT ION 3/10 ...

Page 4

... VN770 PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150 . In any case the maximum voltage drop on this resistor should not overcome 0 ...

Page 5

... 7 1. Test Co nditio ns Min 5 5.4 10 0.003 = 5.4 = 5.4 0.005 VN770 Value Uni 144 -55 to 150 C o -40 to 150 C C C/W Typ . Max. Unit ...

Page 6

... VN770 ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) LOGIC INPUT Symbol Parameter V Input Low Level I L Voltage V Input High Level IH Voltage V Input Hysteresis I(hys t.) Voltage I Input Current Input Clamp Voltage I ICL PROTECTION AND DIAGNOSTICS Symbol Parameter ...

Page 7

... 4 Test Co nditio ns Min 4 VN770 o C unless otherwise Typ . Max. Unit 100 nA Typ . Max. Unit 2.5 V 0.032 0.04 A Typ . Max. Unit S 2115 2800 pF 260 ...

Page 8

... VN770 SOURCE-DRAIN DIODE Symbol Parameter I Source-Drain Current Source-Drain Current SDM (pulsed Forward On Voltage Reverse Recovery Time Reverse Recovery r r Charge I Reverse Recovery RRM Current ( ) Pulsed: Pulse duration = 300 s, duty cycle 1 Pulse width limited by Safe Operating Area. ...

Page 9

... SO-28 MECHANICAL DATA mm DIM. MIN. TYP 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S inch MAX. MIN. TYP. 2.65 0.30 0.004 0.49 0.013 0.32 0.009 0.020 45 (typ.) 18.1 0.697 10.65 0.393 0.050 0.650 7.60 0.291 1.27 0.016 8 (max.) VN770 MAX. 0.104 0.012 0.019 0.012 0.713 0.419 0.299 0.050 0016572 9/10 ...

Page 10

... VN770 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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