BSS119 Infineon Technologies Corporation, BSS119 Datasheet - Page 3

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BSS119

Manufacturer Part Number
BSS119
Description
N-channel Small Signal Mosfet 20v?800v
Manufacturer
Infineon Technologies Corporation
Datasheet

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Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
g
C
C
C
t
t
t
t
I
V
t
Q
Symbol
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
iss
oss
rss
SD
rr
(plateau) V
gs
gd
g
Rev. 1.3
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=0.13A
=0.17A, R
=25°C
=50V, I
/dt=100A/µs
=0, V
=50V, V
=0, I
=80V, I
=80V, I
=0 to 10V
=80V, I
2*I
Conditions
D
F
*R
DS
F =
= I
D
D
D
DS(on)max
G
GS
=25V,
l
S
S
=0.17A
=0.17A,
=6
= 0.17 A
,
=10V,
,
min.
0.08
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.17
21.7
typ.
0.08
0.76
1.67
8.6
3.1
2.7
3.1
9.3
0.8
3.4
60
27
10
-
-
2006-12-01
max.
11.2
0.17
0.68
32.5
0.12
4.1
4.6
1.2
78
14
40
1.1
2.5
15
BSS119
4
-
-
Unit
S
pF
ns
A
V
ns
nC
nC
V

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