SP8M70 ROHM Co. Ltd., SP8M70 Datasheet - Page 2

• Manufacturer Part Number: SP8M70
• Description: 4v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
N-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
Q
V
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
0.75
Min.
Min.
250
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
1.25
Typ.
180
5.2
2.1
1.2
70
20
10
20
20
25
−
−
−
−
−
−
Max.
Max.
1.63
±10
4.0
1.5
25
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
V
I
V
V
I
I
V
V
f=1MHz
I
V
R
R
V
V
R
I
D
D
D
D
S
GS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=1.5A, V
=1.5A, V
=1.5A, V
L
G
L
=3A, V
=83Ω
=42Ω R
=10Ω
=±25V, V
=250V, V
=10V, I
=25V
=0V
=10V
=10V I
125V
GS
Conditions
Conditions
GS
GS
DS
DD
=0V
D
G
D
=1mA
=0V
=10V
=10V
=3A
GS
=10Ω
DS
125V
=0V
=0V
SP8M70
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