SP8M70 ROHM Co. Ltd., SP8M70 Datasheet - Page 4

• Manufacturer Part Number: SP8M70
• Description: 4v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
N-ch
Electrical characteristic curves
0.1
10
1
Fig.4 Dynamic Input Characteristics
1000
0
100
15
10
V
Pulsed
10
5
0
GS
0.01
1
0
Fig.1 Typical Capacitance vs.
=0V
f=1MHz
V
Ta=25°C
Pulsed
Fig.7 Source Current vs.
0.2
Source-Drain Voltage : V
GS
=0V
1
Total Gate Charge : Qg(nC)
Drain-Source Voltage : V
0.1
Drain-Source Voltage
0.4
Source-Drain Voltage
2
0.6
1
3
0.8
4
Crss
10
Ciss
SD
Ta=-25°C
5
(V)
1
Coss
125°C
Ta=25°C
V
I
Pulsed
D
25°C
75°C
DS
100
DD
=3A
(V)
=125V
6
1.2
1000
7
Fig.8 Static Drain-Source On-State
10000
0.1
10
1000
0.01
1
0.1
100
0.1
10
10
V
Pulsed
1
1
Resistance vs. Drain Current
0.01
GS
0
Fig.2 Switching Characteristics
=10V
V
Pulsed
DS
=10V
Fig.5 Typical Transfer
td(off)
Gate-Source Voltage : VGS (V)
Drain Current : I
td(on)
2
Drain Current : I
Characteristics
0.1
tf
1
4
D
(A)
1
D
Ta=125°C
(A)
tr
Ta=-25°C
Ta=25°C
V
V
R
Pulsed
6
-25°C
DD
GS
G
75°C
25°C
=10Ω
125°C
=125V
=10V
25°C
75°C
10
10
8
Fig.6 Static Drain-Source On-State
1000
100
2.5
1.5
0.5
10
10
Resistance vs.Gate-Source Voltage
Fig.9 Static Drain-Source On-State
3
2
1
0
1
9
8
7
6
5
4
3
2
1
0
Fig.3 Reverse Recovery Time vs.
-50 -25
0.1
0
V
Pulsed
GS
Resistance vs. Channel Temperature
Gate-Source Voltage : V
=10V
Reverse Drain Current
1.5A
Reverse Drain Current : I
5
0
Temperature : Tch (°C)
25
I
D
=3A
I
D
=3.0A
10
50
1
SP8M70
75 100 125
1.5A
Ta=25°C
di/dt=100A/µs
V
Pulsed
15
GS
GS
(V)
Ta=25°C
Pulsed
DR
=0V
(A)
4/7
150
20
10