SP8M70 ROHM Co. Ltd., SP8M70 Datasheet - Page 3

• Manufacturer Part Number: SP8M70
• Description: 4v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
Q
V
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
−250
Min.
−2.0
Min.
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
250
2.2
2.5
2.8
40
10
15
30
20
−
−
−
−
−
9
8
−
Max.
Max.
−4.0
−1.5
±10
−25
2.8
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
V
I
V
V
I
I
V
V
f=1MHz
I
V
R
R
V
V
R
I
D
D
D
D
S
GS
DS
DS
DS
GS
GS
DD
GS
= −1mA, V
= −1.25A, V
= −1.25A, V
= −1.25A, V
L
G
L
=−2.5A, V
=100Ω
=50Ω, R
=10Ω
=±15V, V
= −250V, V
= −10V, I
= −25V
=0V
= −10V
= −10V
−125V, I
Conditions
Conditions
G
GS
GS
=10Ω
D
DS
GS
DS
DD
= −1mA
=0V
=0V
GS
D
=0V
= −10V
= −10V
= −2.5A
=0V
−125V
SP8M70
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