SP8M70 ROHM Co. Ltd., SP8M70 Datasheet - Page 5

• Manufacturer Part Number: SP8M70
• Description: 4v Drive Nch+pch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
P-ch
Electrical characteristic curves
Fig.4 Typical Transfer Characteristics
0.01
1000
Fig.10 Forward Transfer Admittance
0.1
0.01
100
10
0.1
10
1
0.01
10
0.01
1
1
0
V
Pulsed
Fig.1 Typical Capacitance vs.
f=1MHz
V
Ta=25°C
Pulsed
V
Pulsed
DS
GS
DS
=10V
vs. Drain Current
=0V
=-10V
Drain-Source Voltage : -V
Gate-Source Voltage : −V
0.1
Drain-Source Voltage
2
Drain Current : I
0.1
1
Ta=-25°C
4
Crss
10
25°C
75°C
75°C
Ciss
1
D
(A)
Coss
100
DS
6
Ta=-25°C
GS
(V)
(V)
125°C
25°C
75°C
1000
10
8
10000
1000
5
4
3
2
1
0
-50 -25
100
10
Fig.11 Gate Threshold Voltage
10
9
8
7
6
5
4
3
2
1
0
V
I
1
0.01
0
D
Fig.5 Static Drain-Source On-State
DS
=1mA
Ta=25°C
Pulsed
Fig.2 Switching Characteristics
=10V
Channel Temperature : Tch (°C)
td(off)
Resistance vs. Gate-Source Voltage
Gate-Source Voltage : -V
td(on)
vs. Channel Temperature
0
5
Drain Current : -I
25
0.1
tf
50
10
I
75 100 125 150
-1.25A
D
=-2.5A
1
D
15
tr
Ta=25°C
V
V
R
Pulsed
(A)
DD
GS
G
GS
=10Ω
= −125V
= −10V
(V)
20
10
Fig.12 Typical Output Characteristics
Fig.3 Dynamic Input Characteristics
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
15
10
1
2
1
0
5
0
0
0
0
V
V
Pulsed
GS
GS
Fig.6 Source Current vs.
1
=10V
=0V
0.2
Source-Drain Voltage : -V
Drain-Sourse Voltage : V
9V
8V
7V
Total Gate Charge : Qg(nC)
2
2
Source-Drain Voltage
3
0.4
6V
4
4
0.6
5
SP8M70
6
6
0.8
5V
4V
7
3V
Ta=25°C
V
I
Pulsed
D
DS
Ta=-25°C
DD
=−2.5A
SD
8
8
=−125V
(V)
(V)
1
125°C
25°C
75°C
9
5/7
1.2
10
10