BSO613SPVG Infineon Technologies Corporation, BSO613SPVG Datasheet - Page 2

• Manufacturer Part Number: BSO613SPVG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint; t
@ 6 cm
Rev.1.3
D
GS
DS
DS
GS
GS
= 1 mA
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -10 V, I
2
cooling area
D
= -250 µA
D
GS
GS
DS
= -3.44 A
= 0 V, T
= 0 V, T
= 0 V
£
10 sec.
1)
; t
GS
j
j
£
= 25 °C
= 125 °C
= V
10 sec.
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
thJA
min.
min.
-2.1
-60
-
-
-
-
-
-
-
Values
Values
typ.
0.11
-0.1
typ.
-10
-10
-3
-
-
-
-
BSO613SPV G
max.
max.
-100
-100
0.13
100
25
50
-4
-1
2007-03-02
-
Unit
V
µA
nA
W
Unit
K/W