IPD038N04NG Infineon Technologies Corporation, IPD038N04NG Datasheet - Page 6

• Manufacturer Part Number: IPD038N04NG
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
DS
=f(T
8
6
4
2
0
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=90 A; V
10
20
98 %
GS
V
=10 V
T
DS
j
Coss
60
20
[°C]
Ciss
[V]
Crss
typ
100
30
140
180
page 6
40
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
10
=f(T
SD
4
3
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
0.5
175 °C
DS
20
; I
D
=250 µA
V
T
25 °C
SD
j
1.0
60
[°C]
[V]
100
IPD038N04N G
1.5
175 °C, 98%
140
25 °C, 98%
2007-12-11
180
2.0