PHD66NQ03LT NXP Semiconductors, PHD66NQ03LT Datasheet
PHD66NQ03LT
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PHD66NQ03LT Summary of contents
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... PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Rev. 06 — 2 August 2004 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold 1.3 Applications DC-to-DC converters 1.4 Quick reference data V DS ...
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... pulsed Figure pulsed unclamped inductive load 0.15 ms starting Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 2 Min - = Figure 2 and 3 - Figure Figure ...
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... Product data sheet 03aa16 120 I der (%) 150 200 Fig 2. Normalized continuous drain current Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 100 150 ------------------- 100% der function of mounting base temperature. t ...
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... Figure 4 mounted on a printed-circuit board; minimum footprint; vertical in still air mounted on a printed-circuit board; minimum footprint; vertical in still air mounted on a printed-circuit board; SOT404 minimum footprint; vertical in still air - Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT Min Typ - - - 03ag18 ...
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... Source-drain diode V source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 9397 750 13429 Product data sheet PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Conditions I = 250 mA ...
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... DS Fig 6. Drain-source on-state resistance as a function 03ag22 ( DSon Fig 8. Normalized drain-source on-state resistance Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET DSon drain current; typical values. ...
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... ( Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET min typ max gate-source voltage. 03ag25 30 Q (nC) G © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Product data sheet 03ag23 (pF 0.9 1 Fig 13. Input, output and reverse transfer capacitances Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET MHz function of drain-source voltage; typical values. © ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT404 ...
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... D E min. 1.1 5.46 0.4 6.22 6.73 4.81 4.0 0.9 5.26 0.2 5.98 6.47 4.45 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET min. 0.9 10.4 2.95 2.285 4.57 0.5 0.5 9.6 2.55 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Document Supersedes number 9397 750 13429 PHP_PHB_PHD66NQ03LT_5 9397 750 13107 PHP_PHB_PHD66NQ03LT_4 9397 750 10158 PHP_PHB_PHD66NQ03LT_3 9397 750 09284 PHP_PHB_PHD66NQ03LT_2 9397 750 09119 PHP_PHB_PHD66NQ03LT_1 9397 750 08725 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 06 — 2 August 2004 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 12 PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...