PBSS301NX NXP Semiconductors, PBSS301NX Datasheet - Page 6

• Manufacturer Part Number: PBSS301NX
• Description: Pbss301nx 12 V, 5.3 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
PBSS301NX_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 22 August 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.3 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 5 V; I
= 12 V; I
= 12 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 40 mA
= 200 mA
= 40 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
E
C
= 0 A
= 50 mA
= 265 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
= i
12 V, 5.3 A NPN low V
= 0 A
= 0 A;
= 0.1 A;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
300
250
200
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS301NX
CEsat
Typ
-
-
-
530
520
480
420
340
18
35
50
70
110
100
125
140
28
32
0.81
0.92
0.75
15
40
55
195
75
270
140
125
(BISS) transistor
Max
100
50
100
-
-
-
-
-
25
50
70
100
160
140
190
200
40
48
0.9
1.05
0.85
-
-
-
-
-
-
-
160
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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A