BUJ101AU NXP Semiconductors, BUJ101AU Datasheet

no-image

BUJ101AU

Manufacturer Part Number
BUJ101AU
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUJ101AU.pdf (8 pages)
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope
intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
PINNING - SOT533
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
September 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
fi
C
CM
B
BM
PIN
FE
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
Top view
1
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
mb
mb
1
BE
BE
2
= 1.0A;I
= 1.0A;V
= 1.0A,I
= 0 V
= 0 V
3
MBK915
25 ˚C
25 ˚C
B
BON
CE
= 200 mA
= 5 V
= 200mA
SYMBOL
b
TYP.
TYP.
MIN.
0.32
Product specification
-65
11
50
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUJ101AU
MAX.
MAX.
MAX.
e
c
0.75
700
700
400
700
400
700
150
150
1.5
1.0
1.5
1.5
2.5
50
14
70
50
3
3
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

Related parts for BUJ101AU

Image
Part Number
Description
Manufacturer
Datasheet
Request R
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3152FET208
Part Number:
LPC3152FET208
Description:
The NXP LPC3152 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3154FET208
Part Number:
LPC3154FET208
Description:
The NXP LPC3154 combines an 180 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
BUK714R1-40BT
Part Number:
BUK714R1-40BT
Description:
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer:
NXP Semiconductors
Datasheet:
BUK714R1-40BT.pdf (13 pages)

BUJ101AU Summary of contents

Page 1

... I = 1.0A;I = 200 1.0A 1.0A,I = 200mA C BON PIN CONFIGURATION Top view MBK915 CONDITIONS ˚C mb CONDITIONS in free air 1 Product specification BUJ101AU TYP. MAX. UNIT - 700 V - 700 V - 400 0.32 1 SYMBOL MIN. ...

Page 2

... CONDITIONS Con Bon ohms BB2 200mA; L Con Bon - 1 200mA; L Con Bon - 100 ˚ Product specification BUJ101AU MIN. TYP. MAX. - 0.9 100 ; - 22 500 - - 100 - 0.04 100 400 - - - 0.32 1.0 - 1. ...

Page 3

... VCEOsust 1 . 0.001 CEOsust Fig.5. Typical DC current gain. h HFE 30 10 100 120 140 1 0.001 Fig.6. Typical DC current gain Product specification BUJ101AU Zth j-mb / (K/W) D= 0.5 1 0.2 0.1 0.05 0. 10us 1ms 0. Fig.4. Transient thermal impedance. Zth = f(t); parameter j-lead p ...

Page 4

... Fig.10. Switching times waveforms with inductive load tfi (ns) 275 250 225 200 175 IC = 1.5A 150 125 100 0.8 4 Product specification BUJ101AU IC/ - 125 C 0.1 1 IC, COLLECTOR CURRENT/A Solid Lines = typ values ICon toff IBon -IBoff IC/ IC/IB =3 IC/ ...

Page 5

... RESISTIVE SWITCHING VCC T.U. Fig.16. Switching times waveforms with resistive load 0.01. p requirements. Bon ts (us) 3 2.5 2 1.5 1 0 Product specification BUJ101AU IC/ IC/ IC/ 1.2 1.4 1.6 1 COLLECTOR CURRENT /A Fig.14. Inductive switching. tsi = f ICon ton toff IBon 30ns ...

Page 6

... IC/ IC/ 0 COLLECTOR CURRENT (A) Fig.19. Resistive switching f IC/A 2.5 2.25 1.75 1.5 1.25 VCL(RBSOAR) PROBE POINT 0.75 0.5 T.U.T. 0.25 Fig.21. Reverse bias safe operating area T = 200 Product specification BUJ101AU IC/ 1 100 200 300 400 500 600 VCEclamp/V for -V = 9V, 5V,3V & -9V -5V -3V -1V 700 800 T j jmax ...

Page 7

... Fig.22. SOT533 surface mounting package. Pin 2 connected to mounting base. September 1999 2 scale 9.8 1.00 0.56 7.28 1.06 6.73 5.36 4.57 2.285 6.94 9.4 1.10 0.46 0.96 6.47 5.26 REFERENCES IEC JEDEC EIAJ TO-251 7 Product specification BUJ101AU SOT533 mounting base Q c EUROPEAN ISSUE DATE PROJECTION 99-02-18 Rev 1.000 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1999 8 Product specification BUJ101AU Rev 1.000 ...

Related keywords