BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 5

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14196
Product data sheet
Fig 5. Test circuit for resistive load switching
Fig 7. Test circuit for inductive load switching
V
R
requirements.
V
IM
CC
B
= t
I
V
and R
Bon
= 6 V to +8 V; V
p
BB
= 300 V; V
/T = 0.01.
V
t
IM
p
0
L
calculated from I
T
BB
= 5 V; L
CC
L
= 250 V; t
B
R
B
C
Con
= 200 H; L
and I
001aab989
p
V
= 20 s;
CC
Bon
DUT
R
L
001aab991
C
L
V
CC
B
DUT
= 1 H.
Rev. 01 — 14 December 2004
Fig 6. Switching times waveforms for resistive load
Fig 8. Switching times waveforms for inductive load
90 %
10 %
I
I
I
I
C
B
C
B
t
r
30 ns
t
on
Silicon diffused power transistor
t
t
I
stg
off
Bon
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
Boff
BUJ105AD
I
t
90 %
10 %
Con
f
I
Boff
t
t
stg
off
I
Bon
001aab992
t
f
I
90 %
10 %
001aab990
Con
t
t
5 of 12
t
t