BUJ303A NXP Semiconductors, BUJ303A Datasheet

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BUJ303A

Manufacturer Part Number
BUJ303A
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
September 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
1 2 3
mb
mb
1
BE
BE
=2.5 A,I
= 3 A; I
= 3 A; V
= 0 V
= 0 V
25 ˚C
25 ˚C
B
B1
CE
= 0.6 A
=0.5 A
= 5 V
SYMBOL
b
TYP.
TYP.
MIN.
0.25
Product specification
145
-65
12
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
1000
c
1000
1.25
500
100
160
500
100
150
150
BUJ303A
1.5
10
10
5
5
2
4
-
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUJ303A Summary of contents

Page 1

... ˚ 0 =2.5 A,I =0 PIN CONFIGURATION tab CONDITIONS ˚C mb CONDITIONS in free air 1 Product specification BUJ303A TYP. MAX. UNIT - 1000 V - 1000 V - 500 100 W 0.25 1 145 160 ns SYMBOL MIN ...

Page 2

... CONDITIONS Con Bon ohms BB2 Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUJ303A MIN. TYP. MAX 0.1 500 - - - 0.25 1.5 - 0. TYP ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUJ303A ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... Fig.11. Collector-Emitter saturation voltage Solid lines = typ values, V 0.1 0.01 1.00 10.00 = f(IB); T =25˚ Product specification VBEsat/V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 IC/A Fig.10. Base-Emitter saturation voltage. = f(IC); at IC/IB =4. BEsat VCEsat/V 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 IC/A = f(IC); at IC/IB =4. CEsat Zth / (K/ 0.5 D= 0.2 0 1E-06 1E-04 1E- Fig.12. Transient thermal impedance f(t); parameter j-mb p BUJ303A 10.0 10 1E+00 /T Rev 1.000 ...

Page 5

... VCL IC max T.U. Fig.15. Forward bias safe operating area. T (1) ( III NB: 1,200 800 1,000 T j jmax 5 Product specification BUJ303A IC/A 100 Duty cycle = 0. (1) 1 (2) I 0.1 0. 100 VCE/V P max and P peak max lines. tot tot Second breakdown limits. Region of permissible DC operation. ...

Page 6

... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.16. TO220AB; pin 2 connected to mounting base. 6 Product specification BUJ303A 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 7 Product specification BUJ303A Rev 1.000 ...

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