BUJ403A NXP Semiconductors, BUJ403A Datasheet

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BUJ403A

Manufacturer Part Number
BUJ403A
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
December 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
1 2 3
mb
mb
1
BE
BE
=2.5 A; I
= 2 A; I
= 3 A; V
= 0 V
= 0 V
25 ˚C
25 ˚C
B
B1
CE
= 0.4 A
=0.5 A
= 5 V
SYMBOL
b
TYP.
TYP.
MIN.
0.15
15.5
Product specification
170
-65
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1200
e
1200
1200
c
1200
1.25
550
100
300
550
100
150
150
BUJ403A
1.0
10
10
6
6
3
5
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUJ403A Summary of contents

Page 1

... T 25 ˚ PIN CONFIGURATION tab CONDITIONS ˚C mb CONDITIONS in free air 1 Product specification BUJ403A TYP. MAX. UNIT - 1200 V - 1200 V - 550 100 W 0.15 1.0 V 15.5 - 170 300 ns SYMBOL c ...

Page 2

... 3 CONDITIONS Con Bon ohms BB2 Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUJ403A MIN. TYP. MAX 0.1 550 - - - 0.15 1.0 - 0. 15.5 - TYP ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUJ403A ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values f 0.01 1.00 10.00 = f(IB); T =25˚ Product specification VBEsat/V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1 IC/A Fig.10. Base-Emitter saturation voltage. = f(IC); at IC/IB =4. BEsat VCEsat/V 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1 IC/A = f(IC); at IC/IB =4. CEsat Zth / (K/ 0.5 D= 0.2 0.1 0. 1E-06 1E-04 1E- Fig.12. Transient thermal impedance f(t); parameter j-mb BUJ403A 1E+ Rev 1.200 ...

Page 5

... VCEclamp (V) Fig.13. Reverse bias safe operating area T December 1998 IBon -VBB 1,000 1,200 1,400 T Fig.14. Test Circuit for reverse bias safe operating j jmax Product specification VCC LC LB T.U.T. area 1000V 150V -5V 200 H BUJ403A VCL = c Rev 1.200 ...

Page 6

... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". December 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product specification BUJ403A 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.200 15,8 max ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 7 Product specification BUJ403A Rev 1.200 ...

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