BUJ403BX NXP Semiconductors, BUJ403BX Datasheet

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BUJ403BX

Manufacturer Part Number
BUJ403BX
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUJ403BX.pdf (7 pages)
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
November 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
V
I
I
I
I
P
T
T
C
CM
fi
case isolated
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
EBO
tot
CEsat
CESM
CEO
CBO
EBO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
C
C
C
1 2 3
hs
hs
1
BE
BE
= 2 A; I
= 2 A; V
= 2.5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
CE
= 0.4 A
B1
= 5 V
= 0.5 A
SYMBOL
b
TYP.
MIN.
0.14
Product specification
140
-65
18
21
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUJ403BX
MAX.
MAX.
1200
e
1200
1200
c
1200
525
203
525
150
150
1.0
10
32
25
10
32
6
6
3
5
-
-
Rev 1.100
UNIT
UNIT
ns
˚C
˚C
W
W
V
V
V
V
A
A
V
V
V
V
V
A
A
A
A

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BUJ403BX Summary of contents

Page 1

... ˚ PIN CONFIGURATION case CONDITIONS ˚ Product specification BUJ403BX TYP. MAX. UNIT - 1200 V - 1200 V - 525 0.14 1 140 203 ...

Page 2

... 2 CONDITIONS Con Bon ohms BB2 Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUJ403BX TYP. MAX. = -5V 1.0 TYP. MAX MIN. TYP. MAX 1.0 525 - - - 0.14 1 ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUJ403BX ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... Fig.11. Base-Emitter saturation voltage Solid lines = typ values, V VCESAT/V 0.6 0.5 0.4 0.3 0.2 0 0.2 = f(I ) Fig.12. Collector-Emitter saturation voltage Solid lines = typ values Product specification BUJ403BX VCEsat/V IC= IC=1A 0.10 IB/A 1.00 = f(IB); T CEsat -40C 25C Tj = 100C 2 0.5 1 IC/A = f(IC); at IC/IB =4. BEsat Tj = 100C 25C 0.4 0 IC/A = f(IC); at IC/IB =4.8 CEsat 10.00 =25˚ ...

Page 5

... BU1706AX IBon -VBB 100m 1 10 100 Fig.15. Test circuit for reverse bias safe operating / 1,000 1,200 1,400 max 5 Product specification BUJ403BX VCC LC VCL(RBSOAR) PROBE POINT LB T.U.T. area. 1200V 150V -5V 200 H Rev 1.100 ...

Page 6

... Fig.16. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BUJ403BX 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.0 (2x) 0.9 0.7 1.3 Rev 1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 7 Product specification BUJ403BX Rev 1.100 ...

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