BUJ103AX NXP Semiconductors, BUJ103AX Datasheet - Page 5

• Manufacturer Part Number: BUJ103AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
Silicon Diffused Power Transistor
Solid lines = typ values, V
120
110
100
100
Fig.9. Collector-Emitter saturation voltage.
90
80
70
60
50
40
30
20
10
10
Fig.8. Typical DC current gain. h
2.0
1.6
1.2
0.8
0.4
0.0
0
1
0.01
0.01
Fig. 7. Normalised power dissipation.
0
%
h
VCEsat/V
FE
PD% = 100 PD/PD
20
IC=1A
40
0.10
parameter V
Tj = 25 C
0.1
2A
P tot
60
IB/A
3A 4A
Ths / C
IC / A
80
CEsat
1.00
25˚C
CE
with heatsink compound
Normalised Derating
= f(IB); T
100
1
= f (T
1V
120
FE
hs
5V
)
10.00
= f(I
j
=25˚C.
140
C
10
)
4
Solid lines = typ values, V
Solid lines = typ values, V
Fig.11. Collector-Emitter saturation voltage.
0.001
0.01
Fig.10. Base-Emitter saturation voltage.
0.1
10
0.5
0.4
0.3
0.2
0.1
0.0
Fig.12. Transient thermal impedance.
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
VCEsat/V
0.1
Zth / (K/W)
VBEsat/V
0.05
0.02
D=0
0.5
0.2
0.1
Z
th j-hs
1u
10u
= f(t); parameter D = t
100u
1m
IC/A
IC/A
1
1
t / s
CEsat
BEsat
P
10m
D
= f(IC); at IC/IB =4.
= f(IC); at IC/IB =4.
100m
t p
Product specification
T
BUJ103AX
BU1706AX
1
D =
p
/T
T
t
p
t
10
10
10
Rev 1.000
100