BUJ204A NXP Semiconductors, BUJ204A Datasheet - Page 6

• Manufacturer Part Number: BUJ204A
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
Fig.14. Test Circuit for reverse bias safe operating
Silicon Diffused Power Transistor
Fig.13. Reverse bias safe operating area T
IC (A)
11
10
-VBB
9
8
7
6
5
4
3
2
1
0
IBon
0
V
100
cl
200
1000V; V
L
B
300
= 1 H; L
VCEclamp (V)
400
LB
cc
area.
= 150V; V
500
c
= 200 H
600
LC
700
BB
VCC
800
= -5V;
T.U.T.
900
VCL
1,000
j
T
jmax
5
Fig.15. Forward bias safe operating area. T
Icm max
(1)
(2)
I
II
III
NB:
Ic max
IC (A)
0.01
100
0.1
10
1
1
P
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
Mounted with heatsink compound and
30
envelope.
tot
BE
max and P
5 newton force on the centre of the
100
10
VCEclamp (V)
I
(1)
and t
Duty cycle = 0.01
tot
peak max lines.
p
100
(2)
0.6 s.
Product specification
II
BUJ204A
III
1,000
tp =
10us
100us
0.5ms
hs
2ms
DC
Rev 1.000
25 ˚C